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| BAV99WT1, BAV99RWT1 Preferred Devices Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features * Pb-Free Packages are Available Suggested Applications http://onsemi.com * * * * * ESD Protection Polarity Reversal Protection Data Line Protection Inductive Load Protection Steering Logic ANODE 1 CATHODE 2 3 CATHODE/ANODE BAV99WT1 SC-70 CASE 419, STYLE 9 CATHODE 1 Symbol VR IF IFM(surge) VRRM IF(AV) Value 70 215 500 70 715 Unit Vdc mAdc mAdc V mA 3 CATHODE/ANODE BAV99RWT1 SC-70 CASE 419, STYLE 10 ANODE 2 MAXIMUM RATINGS (Each Diode) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non-Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S MARKING DIAGRAM IFRM IFSM 2.0 1.0 0.5 450 mA A 1 2 A7 = BAV99WT1 F7 = BAV99RWT1 D = Date Code 3 SC-70 CASE 419 x7....D Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-5 = 1.0 0.75 0.062 in. ORDERING INFORMATION Device BAV99WT1 BAV99WT1G BAV99RWT1 BAV99RWT1G Package SC-70 SC-70 (Pb-Free) SC-70 SC-70 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 1 January, 2005 - Rev. 4 Publication Order Number: BAV99WT1/D BAV99WT1, BAV99RWT1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Symbol PD RqJA PD RqJA TJ, Tstg Max 200 1.6 625 300 2.4 417 -65 to +150 Unit mW mW/C C/W mW mW/C C/W C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Each Diode) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mA) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) V(BR) IR 70 - - - - - - - - - - - 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Vdc mAdc CD VF pF mVdc Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. trr VFR ns V 820 W +10 V 2k 100 mH 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 mF tr 10% tp t IF trr t Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: (c) tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAV99WT1, BAV99RWT1 CURVES APPLICABLE TO EACH DIODE 100 IF, FORWARD CURRENT (mA) I R, REVERSE CURRENT ( A) 10 TA = 150C 1.0 TA = 125C 10 TA = 85C TA = 25C TA = -40C 0.1 TA = 85C 1.0 TA = 55C 0.01 TA = 25C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 0.001 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 BAV99WT1, BAV99RWT1 PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE L A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 S 1 2 B D G C 0.05 (0.002) N K J STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE H SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 BAV99WT1/D |
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